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Proceedings Paper

High-quality SiNx gate insulator for a-Si:H TFT LCD
Author(s): Wen-Jian Lin; Hsiung-Ku Tsai; Biing-Seng Wu; Tung-Liang Lin; Yee-Min Lin; Hsiung-Kuang Chen
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Paper Abstract

We have deposited silicon nitride (SiNx) films by plasma-enhanced chemical vapor deposition (PECVD) at 270 degree(s)C. Films are prepared by using silane (SiH4) and ammonia (NH3) source gases with hydrogen (H2) or nitrogen (N2) dilution. The film properties, including N/Si atomic ratio, hydrogen content, and the etching rate in 5% buffered HF are sensitive to the changes in dilution gases (H2 or N2) flow rate during deposition. For films with N/Si equals 1.33 (calculated by Rutherford backscattering, RBS); refractive index ((lambda) equals 6328 A) equals 2.0; hydrogen content equals 13% (calculated by Fourier transform infrared spectrometer, FTIR); and the etching rate in 5% buffered HF less than 50 A/min were achieved. In addition, the deposition rate of SiNx films were dropped dramatically by adding dilution gases, especially with H2 (from 4 A/sec to 1 A/sec). 3- inch 92,000 pixel elements a-Si:H TFT arrays with pre-mentioned high-quality SiNx films as gate insulators have been manufactured. The interlayer short defects of the a-Si:H TFT matrix arrays can be reduced to 3 points by adding dilution gas.

Paper Details

Date Published: 27 October 1992
PDF: 7 pages
Proc. SPIE 1815, Display Technologies, (27 October 1992); doi: 10.1117/12.131311
Show Author Affiliations
Wen-Jian Lin, Industrial Technology Research Institute (Taiwan)
Hsiung-Ku Tsai, Industrial Technology Research Institute (Taiwan)
Biing-Seng Wu, Industrial Technology Research Institute (Taiwan)
Tung-Liang Lin, Industrial Technology Research Institute (Taiwan)
Yee-Min Lin, Industrial Technology Research Institute (Taiwan)
Hsiung-Kuang Chen, Industrial Technology Research Institute (Taiwan)


Published in SPIE Proceedings Vol. 1815:
Display Technologies
Shu-Hsia Chen; Shin-Tson Wu, Editor(s)

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