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Proceedings Paper

Effects of annealing on ZnS:TbF3 electroluminescent devices prepared by rf sputtering
Author(s): Jiin Wen Li; Yan-Kuin Su; Meiso Yokoyama
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Paper Abstract

In this study, four kinds of samples have been prepared for investigating the effects of annealing. The active layer which has higher post-annealing temperature may have better crystallinity, but the effects of higher post-annealing temperature may do damage to the interface states. The degradation of ACTFEL devices may be caused by the lower conduction current passed the active layer.

Paper Details

Date Published: 27 October 1992
PDF: 4 pages
Proc. SPIE 1815, Display Technologies, (27 October 1992); doi: 10.1117/12.131306
Show Author Affiliations
Jiin Wen Li, National Cheng Kung Univ. (Taiwan)
Yan-Kuin Su, National Cheng Kung Univ. (Taiwan)
Meiso Yokoyama, National Cheng Kung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 1815:
Display Technologies
Shu-Hsia Chen; Shin-Tson Wu, Editor(s)

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