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Preparation and testing of InSb CID FPA: isolation oxide prepared by radio-frequency chemical vapor deposition and photoactivated CVD
Author(s): Joseph B. Underwood; Chih-Hong Chen
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Paper Abstract

This paper describes processing methods and test results on single crystal indium antimonide (InSb) charge injection device (CID) focal plane arrays (FPAs) with SiO2 made by (1) radio frequency heated chemical vapor deposition (rf CVD); or (2) photoactivated CVD (PACVD). Processing details are more detailed than previously revealed. Related process testing is also discussed.

Paper Details

Date Published: 26 October 1992
PDF: 9 pages
Proc. SPIE 1814, Optical Sensors, (26 October 1992); doi: 10.1117/12.131291
Show Author Affiliations
Joseph B. Underwood, Sparta, Inc. (United States)
Chih-Hong Chen, Pacitek Co. (United States)

Published in SPIE Proceedings Vol. 1814:
Optical Sensors
Chih-Hong Chen; Tieh-Chu Wang, Editor(s)

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