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Proceedings Paper

Interface properties of passivation layers on HgCdTe
Author(s): Wen-Bin Tang; Tin-Fung Chang; Jia-Song Wu; Tien-Ming Chuang; Feng-Yuh Juang; Chung-Chi Chang; J. D. Cin; C. J. Hwang; Yan-Kuin Su
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Paper Abstract

The passivation of HgCdTe plays an important role in determining its device performance. Because of the extreme temperature sensitivity of the HgCdTe, we constrain deposition processes within 90 degree(s)C. Three different kinds of passivation layers (SiO2, ZnS, native oxide/ZnS) have been studied and compared in this paper. The AES is used to evaluate the composition. The C-V curve of MIS capacitor and I-V curve of P-N junction diode are used to characterize the electrical properties of these passivation layers. We have successfully grown an excellent SiO2 layer by the direct photo-CVD method at 70 degree(s)C, which makes the RoA of HgCdTe photovoltaic diode to be as high as 5 X 105 ohm- cm2 at 77 degree(s)K.

Paper Details

Date Published: 26 October 1992
PDF: 6 pages
Proc. SPIE 1814, Optical Sensors, (26 October 1992); doi: 10.1117/12.131290
Show Author Affiliations
Wen-Bin Tang, Chung Shan Institute of Science and Technology (Taiwan)
Tin-Fung Chang, Chung Shan Institute of Science and Technology (Taiwan)
Jia-Song Wu, Chung Shan Institute of Science and Technology (Taiwan)
Tien-Ming Chuang, Chung Shan Institute of Science and Technology (Taiwan)
Feng-Yuh Juang, Chung Shan Institute of Science and Technology (Taiwan)
Chung-Chi Chang, Chung Shan Institute of Science and Technology (Taiwan)
J. D. Cin, National Cheng Kung Univ. (Taiwan)
C. J. Hwang, National Cheng Kung Univ. (Taiwan)
Yan-Kuin Su, National Cheng Kung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 1814:
Optical Sensors
Chih-Hong Chen; Tieh-Chu Wang, Editor(s)

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