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Proceedings Paper

Narrowband self-filtering GaAs photodetector characterized by hi-lo-hi np junction
Author(s): Jin-Shown Shie; Jonathan S. Li; Fei-Chang Hwang; Heidi T. Wang
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Paper Abstract

Narrowband self-filtering GaAs photodiode has been fabricated by LPE growth. N-type epitaxial layers of hi-lo-hi structure were grown on P-type substrate. By properly controlling the thickness and the doping concentration of the epilayers efficient blue suppression of the detector response is achievable, with a bandwidth as narrow as 315 angstroms centered at 880 nm. The device, therefore, is very useful in many applications which require background suppression and spectral matching to the correspondent LED light source.

Paper Details

Date Published: 26 October 1992
PDF: 4 pages
Proc. SPIE 1814, Optical Sensors, (26 October 1992); doi: 10.1117/12.131288
Show Author Affiliations
Jin-Shown Shie, National Chiao Tung Univ. (Taiwan)
Jonathan S. Li, National Chiao Tung Univ. (United States)
Fei-Chang Hwang, National Chiao Tung Univ. (Taiwan)
Heidi T. Wang, Opto-Tech Corp. (Taiwan)

Published in SPIE Proceedings Vol. 1814:
Optical Sensors
Chih-Hong Chen; Tieh-Chu Wang, Editor(s)

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