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Proceedings Paper

High-performance PtSi Schottky barrier sensor array with imaging capability
Author(s): Tien-Ming Chuang; Chia Ho; Gi-Ming Shiue; Gwo-Ji Horng; Yu-Wen Chen; Feng-Yuh Juang; Chung-Chi Chang; Ho-Ching Chien; Han-Yu Chang; Chung-Ren Lao; Mon-Shen Chen; Chun-Hui Tsai
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Paper Abstract

A high performance PtSi Schottky barrier sensor array was developed. It was fabricated by using a double-poly double-metal 2.0 micrometers Si-based technology and an ultra-high vacuum E-beam PtSi process. The barrier height of the Schottky barrier IR detector is 0.21 to 0.22 eV with 4nA/cm2 dark current density at 77 degree(s)K. Its quantum efficiency is 0.3% at 4 micrometers . The charge handling capacity of the CCD is larger than 2.0E6 electrons/pixel. The charge transfer efficiency of the CCD at 77 degree(s)K is 0.9998 to 0.9999. The imaging capability of this chip to a thermal scene has been demonstrated.

Paper Details

Date Published: 26 October 1992
PDF: 8 pages
Proc. SPIE 1814, Optical Sensors, (26 October 1992); doi: 10.1117/12.131275
Show Author Affiliations
Tien-Ming Chuang, Chung Shan Institute of Science and Technology (Taiwan)
Chia Ho, Chung Shan Institute of Science and Technology (Taiwan)
Gi-Ming Shiue, Chung Shan Institute of Science and Technology (Taiwan)
Gwo-Ji Horng, Chung Shan Institute of Science and Technology (Taiwan)
Yu-Wen Chen, Chung Shan Institute of Science and Technology (Taiwan)
Feng-Yuh Juang, Chung Shan Institute of Science and Technology (Taiwan)
Chung-Chi Chang, Chung Shan Institute of Science and Technology (Taiwan)
Ho-Ching Chien, Industrial Technology Research Institute (Taiwan)
Han-Yu Chang, Industrial Technology Research Institute (Taiwan) (United States)
Chung-Ren Lao, Industrial Technology Research Institute (Taiwan) (United States)
Mon-Shen Chen, Industrial Technology Research Institute (Taiwan)
Chun-Hui Tsai, Industrial Technology Research Institute (Taiwan)


Published in SPIE Proceedings Vol. 1814:
Optical Sensors
Chih-Hong Chen; Tieh-Chu Wang, Editor(s)

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