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Proceedings Paper

Water effects on the properties of SiO2/PSG/SiO2 passivation of InSb
Author(s): Yongqiang Pan
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Paper Abstract

Using in situ stress measurement combined with infrared spectra and high frequency capacitance-voltage measurement, water effects on the properties of sio2/PSG/sio2 passivation of InSb have been investigated during the passivation film exposure to air after high vacuum annealing. Water absorption in the film gives rise to a compressive stress, causes the flat-band of the film's capacitance-voltage curve to shift toward positive and assists ions to diffuse into the film. These show that water absorption in the porous structure of the passivating film can be the cause of the instability of the film's properties.

Paper Details

Date Published: 26 October 1992
PDF: 11 pages
Proc. SPIE 1814, Optical Sensors, (26 October 1992); doi: 10.1117/12.131273
Show Author Affiliations
Yongqiang Pan, Luoyang Optic-Electronics Institute (China)


Published in SPIE Proceedings Vol. 1814:
Optical Sensors
Chih-Hong Chen; Tieh-Chu Wang, Editor(s)

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