Proceedings Paper
AlGaSb/GaSb metal-semiconductor-metal detectors grown on InP substrates| Format | Member Price | Non-Member Price |
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Paper Abstract
Al0.5Ga0.5Sb/GaSb metal-semiconductor-metal (MSM) detectors have been prepared on semi-insulating InP substrates. The molecular beam epitaxially grown samples on differently orientated substrates exhibit different types of conductivity. The Schottky barrier height between Al and Al0.5Ga0.5Sb grown on (311)B oriented substrates is 0.6 eV, while the Al contacts on (100) sample exhibit ohmic behavior. The results show that the Sb- deficiency related p-type native defect density is significantly reduced in the samples grown on (311)B oriented substrates. The 3-dB device response bandwidth is about 1 GHz at room temperature and beyond 10 GHz at 77 K.
Paper Details
Date Published: 23 October 1992
PDF: 11 pages
Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); doi: 10.1117/12.131262
Published in SPIE Proceedings Vol. 1813:
Optoelectronic Component Technologies
GouChung Chi; Chi-Shain Hong, Editor(s)
PDF: 11 pages
Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); doi: 10.1117/12.131262
Show Author Affiliations
Yuqi Wang, Columbia Univ. (United States)
Malvin C. Teich, Columbia Univ. (United States)
Malvin C. Teich, Columbia Univ. (United States)
Wen I. Wang, Columbia Univ. (United States)
Published in SPIE Proceedings Vol. 1813:
Optoelectronic Component Technologies
GouChung Chi; Chi-Shain Hong, Editor(s)
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