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Proceedings Paper

Nonlinearity enhancement at boundary promoting spatial soliton emission
Author(s): Changjun Liao; Dong-Ying Bee; Chung-Ji Li
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Paper Abstract

Soliton switching based on spatial solution emission requires the cladding material has high enough nonlinear change of the index. We describe the design of a waveguide that has nonlinearity enhancement at the boundary due to deep level states excitation. The example material is the AlxGa1-xAs. This material has El2 related deep level states which become deeper as the AlAs mole fraction increases so that we can suitably choose the bandgap, and therefore the deep levels to match the working wavelength. The distribution of the guided mode field is also modified by the design of the waveguide geometry to facilitate an inner built electric field which is responsible for the nonlinearity enhancement.

Paper Details

Date Published: 23 October 1992
PDF: 5 pages
Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); doi: 10.1117/12.131260
Show Author Affiliations
Changjun Liao, South China Normal Univ. (China)
Dong-Ying Bee, South China Normal Univ. (China)
Chung-Ji Li, South China Normal Univ. (China)


Published in SPIE Proceedings Vol. 1813:
Optoelectronic Component Technologies
GouChung Chi; Chi-Shain Hong, Editor(s)

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