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Proceedings Paper

AlGaInP green light-emitting diode
Author(s): Tzer-Perng Chen; C. Y. Chen; J. K. Hsu; J. R. Deng; M. J. Jou; Chuan-Ming Chang; J. Y. Kao; Biing-Jye Lee; Su-Hui Hsu
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Paper Abstract

The structures and performances of surface emitting AlGaInP green light emitting diodes (LEDs) with emission wavelength around 565 nm were studied. The AlGaInP green LEDs with epitaxial structure grown on P-type GaAs substrate showed the best performance. This is the first paper ever reported for the fabrication of AlGaInP LEDs using P-type GaAs as a substrate. In AlGaInP LED structure using P-type GaAs substrate, the highly conductive n- type AlInP was consequently used as a top confining layer and the current crowding problem was significantly improved. Therefore, the green electroluminescence (EL) was uniformly emitted from the surface of LED dice.

Paper Details

Date Published: 23 October 1992
PDF: 6 pages
Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); doi: 10.1117/12.131244
Show Author Affiliations
Tzer-Perng Chen, Industrial Technology Research Institute (Taiwan)
C. Y. Chen, Industrial Technology Research Institute (Taiwan)
J. K. Hsu, Industrial Technology Research Institute (Taiwan)
J. R. Deng, Industrial Technology Research Institute (Taiwan)
M. J. Jou, Industrial Technology Research Institute (Taiwan)
Chuan-Ming Chang, Industrial Technology Research Institute (Taiwan)
J. Y. Kao, Industrial Technology Research Institute (Taiwan)
Biing-Jye Lee, Industrial Technology Research Institute (Taiwan)
Su-Hui Hsu, Industrial Technology Research Institute (Taiwan)


Published in SPIE Proceedings Vol. 1813:
Optoelectronic Component Technologies
GouChung Chi; Chi-Shain Hong, Editor(s)

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