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Proceedings Paper

Semiconductor optical switch with MOCVD-grown low-barrier quantum wells
Author(s): B. K. Kim; Seung-Won Lee; T. M. Kim; Kwang-uk Chu; O'Dae Kwon; Mun Seok Jeong; B. K. Kang; Kwang Nham Kang
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Paper Abstract

A successful fabrication of semiconductor optical switch, similar in function to the self- electro-optic effect devices, is reported for the first time from MOCVD-grown GaAs/AlGaAs low barrier quantum well pin diodes (Al fraction, x equals 4%). A reflective 16 X 8 switch array and its performance are also reported. The maximum contrast ratio was found to be 2.9:1 at 5 V bias.

Paper Details

Date Published: 23 October 1992
PDF: 7 pages
Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); doi: 10.1117/12.131238
Show Author Affiliations
B. K. Kim, Pohang Institute of Science and Technology (South Korea)
Seung-Won Lee, Pohang Institute of Science and Technology (South Korea)
T. M. Kim, Pohang Institute of Science and Technology (South Korea)
Kwang-uk Chu, Pohang Institute of Science and Technology (South Korea)
O'Dae Kwon, Pohang Institute of Science and Technology (South Korea)
Mun Seok Jeong, Pohang Institute of Science and Technology (South Korea)
B. K. Kang, Pohang Institute of Science and Technology (South Korea)
Kwang Nham Kang, Korea Institute of Science and Technology (South Korea)


Published in SPIE Proceedings Vol. 1813:
Optoelectronic Component Technologies
GouChung Chi; Chi-Shain Hong, Editor(s)

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