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Proceedings Paper

Fundamental mode operation of high-power InGaAs/GaAs/AlGaAs laser arrays
Author(s): Jian-Shihn Tsang; D. C. Liou; C. M. Tsai; C. P. Lee; Feng-Yuh Juang
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Paper Abstract

Single narrow stripe ridge-waveguide modified triple-quantum-well AlGaAs lasers were fabricated with high reflection and anti-reflection facet coatings. The maximum cw output power exceeded 100 mW and kink-free power was up to 80 mW. The device had a characteristic temperature of 320 degree(s)K and a threshold current density of 480 A/cm2. A lateral spreading current as large as 20 mA was found. The aspect ratio of the far-field beam pattern was four while the astigmatism was measured to be less than 5 micrometers . The dependence of the parallel beam divergent angle on the ridge width was also investigated.

Paper Details

Date Published: 23 October 1992
PDF: 3 pages
Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); doi: 10.1117/12.131230
Show Author Affiliations
Jian-Shihn Tsang, National Chiao Tung Univ. (Taiwan)
D. C. Liou, National Chiao Tung Univ. (Taiwan)
C. M. Tsai, National Chiao Tung Univ. (Taiwan)
C. P. Lee, National Chiao Tung Univ. (Taiwan)
Feng-Yuh Juang, Chung Shan Institute of Science and Technology (Taiwan)


Published in SPIE Proceedings Vol. 1813:
Optoelectronic Component Technologies
GouChung Chi; Chi-Shain Hong, Editor(s)

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