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Proceedings Paper

Development of a high-performance In0.4Ga0.6As photodiode on GaAs substrate for 1.3-um wavelength detection
Author(s): Yen C. Tzeng; Sheng S. Li
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Paper Abstract

A new stable fundamental mode operation of a ridge wave guide laser array has been fabricated by introducing absorption regions in the laser stripes except the central one. The structure may be considered as an integrated injection locking array or the distributed saturable absorption laser array. The threshold current is typically 40 mA and the maximum power is more than 150 mW for laser arrays with five elements. The single lobed far field pattern is centered at 0 degree(s) with a full width at half maximum of 2 degree(s) at I equals 1.5 Ith.

Paper Details

Date Published: 23 October 1992
PDF: 11 pages
Proc. SPIE 1813, Optoelectronic Component Technologies, (23 October 1992); doi: 10.1117/12.131229
Show Author Affiliations
Yen C. Tzeng, Univ. of Florida (United States)
Sheng S. Li, Univ. of Florida (United States)


Published in SPIE Proceedings Vol. 1813:
Optoelectronic Component Technologies
GouChung Chi; Chi-Shain Hong, Editor(s)

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