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Proceedings Paper

Solid-phase doping of silicon by flash lamp and laser irradiation
Author(s): A. V. Chankin; G. N. Mikhailova; A. S. Seferov; Yakh'ya V. Fattakhov; Il'dus B. Khaibullin; Anurada Dhaul; R. Chander
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Paper Abstract

A comparative investigation of flash lamp and laser doping of Si was carried out in order to study a possibility of pulsed solid-phase processing of large size wafers. Submicron boron- doped layers in Si were formed by either Xe flash lamp or CO2 laser applications. Two types of surface dopant source were successfully used: pure boron and boron-containing emulsitone. SIMS, four-probe method, and Hall effect were used for sample characterization.

Paper Details

Date Published: 1 August 1992
PDF: 11 pages
Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131062
Show Author Affiliations
A. V. Chankin, General Physics Institute (Russia)
G. N. Mikhailova, General Physics Institute (Russia)
A. S. Seferov, General Physics Institute (Russia)
Yakh'ya V. Fattakhov, Kazan Physical-Technical Institute (Russia)
Il'dus B. Khaibullin, Kazan Physical-Technical Institute (Russia)
Anurada Dhaul, Solid State Physics Lab. (India)
R. Chander, Solid State Physics Lab. (India)

Published in SPIE Proceedings Vol. 1783:
International Conference of Microelectronics: Microelectronics '92

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