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Proceedings Paper

Advanced MESFET burn-in method and equipment
Author(s): Balazs Kovacs; Imre Mojzes; Ferenc Csanyi
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Paper Abstract

An advanced method was developed for MESFET burn-in purposes, based on preserving the samples in different stages of the degradation process, due to thermal and electrical stress, for subsequent structural investigations. This is performed by the automatic termination of the electrical stress separately on any device before its complete destruction. The equipment realizing this method is also described.

Paper Details

Date Published: 1 August 1992
PDF: 5 pages
Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131060
Show Author Affiliations
Balazs Kovacs, Research Institute for Technical Physics (Hungary)
Imre Mojzes, Technical Univ. (Hungary)
Ferenc Csanyi, Research Institute for Technical Physics (Hungary)


Published in SPIE Proceedings Vol. 1783:
International Conference of Microelectronics: Microelectronics '92

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