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Proceedings Paper

Properties of heterostructures for pseudomorphic HEMTs
Author(s): T. Skrabka; Cliva M. Sotomayor-Torres
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Paper Abstract

The transport properties of the pseudomorphic system Al0.23Ga0.77As-In0.11Ga0.89As have been studied by magneto-transport combined with high pressures technique up to 8 kbar at 4 K. Shubnikov-de Haas measurements reveal a marked decrease in carrier concentration with increasing pressure, which is attributed to carriers being trapped at centers responsible for parallel conduction. From Van der Pauw measurements at various temperatures and pressures, the presence of a DX-like center is proposed. At high pressures, the reduced scattering and Fermi energy allows the resolution of some spin-split levels giving an indication that the g-factor is enhanced in this system as compared to the bulk InGaAs, although a precise value is not extracted.

Paper Details

Date Published: 1 August 1992
PDF: 10 pages
Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131059
Show Author Affiliations
T. Skrabka, Technical Univ. of Wroclaw (Poland)
Cliva M. Sotomayor-Torres, Univ. of Glasgow (United Kingdom)

Published in SPIE Proceedings Vol. 1783:
International Conference of Microelectronics: Microelectronics '92

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