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Proceedings Paper

600-degree C thermal oxidation of amorphous LPCVD silicon for thin-filmtransistor application
Author(s): G. Sarrabayrouse; P. Taurines; E. Scheid; D. Bielle-Daspet; B. de Mauduit; J. P. Guillemet; A. Martinez
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Paper Abstract

Silicon layers deposited by low pressure chemical vapor deposition at a temperature between 520 degree(s)C and 620 degree(s)C have been oxidized at 600 degree(s)C to evaluate the feasibility of a pad oxide for a multilayered insulator used as the gate of a thin film transistor. It is concluded that such a pad oxide can be used if the silicon is deposited in the amorphous phase.

Paper Details

Date Published: 1 August 1992
PDF: 5 pages
Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131058
Show Author Affiliations
G. Sarrabayrouse, LAAS-CNRS (France)
P. Taurines, LAAS-CNRS (France)
E. Scheid, LAAS-CNRS (France)
D. Bielle-Daspet, LAAS-CNRS (France)
B. de Mauduit, CEMES/LOE (France)
J. P. Guillemet, CEMES/LOE (France)
A. Martinez, LAAS-CNRS (France)


Published in SPIE Proceedings Vol. 1783:
International Conference of Microelectronics: Microelectronics '92

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