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Proceedings Paper

Reduction of residual doping in molecular-beam epitaxial GaAs
Author(s): Gencho M. Minchev; L. Pramatarova; Ludmil M. Trendafilov; Balint Podor; K. Somogyi; L. Andor; Imre Mojzes
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Paper Abstract

Unintentionally doped GaAs molecular beam epitaxial layers were grown using MBE equipment developed for research purposes. The process of surface treatment of the GaAs substrates is described. The MBE grown layers were characterized using temperature dependent Hall effect measurements, and low temperature photoluminescence spectroscopy. The occurrence of unintentional doping elements (C and Mn) are studied too. A novel method is proposed to reduce the amount of unintentional C resulting in an estimated concentration of C less than about a few times 1014 cm-3.

Paper Details

Date Published: 1 August 1992
PDF: 8 pages
Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131054
Show Author Affiliations
Gencho M. Minchev, Institute of Solid State Physics (Bulgaria)
L. Pramatarova, Institute of Solid State Physics (Bulgaria)
Ludmil M. Trendafilov, Institute of Solid State Physics (Bulgaria)
Balint Podor, Research Institute for Technical Physics (Hungary)
K. Somogyi, Research Institute for Technical Physics (Hungary)
L. Andor, Research Institute for Technical Physics (Hungary)
Imre Mojzes, Research Institute for Technical Physics (Hungary)


Published in SPIE Proceedings Vol. 1783:
International Conference of Microelectronics: Microelectronics '92

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