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Proceedings Paper

Pulsed laser-excited microwave photoconductivity applications to high-resolution defect diagnostics of ion- and laser-beam-modified semiconductor surface
Author(s): Alexander A. Manenkov; Sergei Yurievich Sokolov; D. L. Khavroshin
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Paper Abstract

A novel diagnostic technique for the study of semiconductor surfaces based on laser induced microwave photoconductivity detection with high spatial and temporal resolution is described. Experimental data on nonlocal modification effects in laser produced scribing, doping, and annealing of ion implanted GaAs and Si are presented. Mechanisms of nonlocal structural and electric properties changers under modification are analyzed. Nonlocality phenomena are concluded to be universal for any strong modification procedure and very important for microelectronics technology.

Paper Details

Date Published: 1 August 1992
PDF: 11 pages
Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131049
Show Author Affiliations
Alexander A. Manenkov, General Physics Institute (Russia)
Sergei Yurievich Sokolov, General Physics Institute (Russia)
D. L. Khavroshin, General Physics Institute (Russia)

Published in SPIE Proceedings Vol. 1783:
International Conference of Microelectronics: Microelectronics '92

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