Share Email Print
cover

Proceedings Paper

Radiation-induced modification of the dry vacuum photoresist layers during ion implantation
Author(s): E. V. Kotov; Yurii Ivanovich Gudimenko; Vladimir Enokovich Agabekov
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Peculiarities of 30...100 keV P+ and Ar+ ion implantation into dry vacuum resist on the base of -pyrone have been studied by x-ray photoelectron spectroscopy and Rutherford backscattering spectrometry. Phosphorus atom distribution profile has been shown to have an anomalous shape with two peaks, one of which is situated in a region of projected range, while the other is on the sample surface directly. Radiation-induced diffusion and solid phase reactions leading to phosphorus organic coating formation of about 40..50 Ao in thickness has been revealed to occur during phosphorus ion implantation.

Paper Details

Date Published: 1 August 1992
PDF: 5 pages
Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131048
Show Author Affiliations
E. V. Kotov, Institute of Physical Organic Chemistry (Belarus)
Yurii Ivanovich Gudimenko, Institute of Physical Organic Chemistry (Belarus)
Vladimir Enokovich Agabekov, Institute of Physical Organic Chemistry (Belarus)


Published in SPIE Proceedings Vol. 1783:
International Conference of Microelectronics: Microelectronics '92

© SPIE. Terms of Use
Back to Top