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Proceedings Paper

Growth kinetics and properties of ultrathin films of silicon dioxide
Author(s): Vjacheslav Vladimirov Khatko; N. V. Rumak
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Paper Abstract

The growth kinetics, the structure, and the properties of films up to 25 nm thickness, obtained by thermal oxidation in dry oxygen of silicon substrates doped by phosphorus, are studied. It is shown that on a definite stage of oxidation, the anomalies connected with the structural transformations in oxides are observed in the kinetics, the change of oxide density, and the quantity of stresses in the system Si-SiO2. The results obtained are explained on the basis of the silicon heterogeneous oxidation reaction suggested by the authors earlier.

Paper Details

Date Published: 1 August 1992
PDF: 7 pages
Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131044
Show Author Affiliations
Vjacheslav Vladimirov Khatko, Physical and Engineering Institute (Belarus)
N. V. Rumak, Physical and Engineering Institute (Belarus)


Published in SPIE Proceedings Vol. 1783:
International Conference of Microelectronics: Microelectronics '92

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