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Proceedings Paper

Etching of silicon in CBrF3: formation of deep trenches and plasma diagnostics
Author(s): Yuri P. Baryshev; K. Sh. Isaev; I. E. Nikiphorov; Alexander A. Orlikovsky; A. V. Sapozhnikov
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Paper Abstract

Etching of silicon has been examined in CBrF3 plasma in a wide pressure range (2 - 100 Pa). Optical emission of CBrF3 plasma was investigated in the visible range. Mass spectrometry was used for the studying of ion plasma composition and for the determination of the main etching products. Conditions for the high quality trenches were determined.

Paper Details

Date Published: 1 August 1992
PDF: 12 pages
Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131041
Show Author Affiliations
Yuri P. Baryshev, Institute of Physics and Technology (Russia)
K. Sh. Isaev, Institute of Physics and Technology (Russia)
I. E. Nikiphorov, Institute of Physics and Technology (Russia)
Alexander A. Orlikovsky, Institute of Physics and Technology (Russia)
A. V. Sapozhnikov, Institute of Physics and Technology (Russia)


Published in SPIE Proceedings Vol. 1783:
International Conference of Microelectronics: Microelectronics '92

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