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Proceedings Paper

Investigation of time stability porous silicon layer
Author(s): Vladimir Kiselev; Anatoly Ohurilov; Anatoly Chrebtugov; Dmitry V. Buyanov; Andrey Svetlov
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Paper Abstract

The electrochemical etching of silicon in electrolytes is proposed as a method for realizing three-dimensional sensor and actuator elements. Preparation and properties of a porous silicon layer (PSL) were investigated. A single silicon crystal was converted into PSL by anodization in the solution of hydrofluoric acid and ethanol with different concentrations. He-Ne laser was used for the stimulation of electrochemical reaction on n-type silicon. As a result of photoelectrochemical reactions, many micropores are formed inside PSL and zig-zag in the thickness direction. This porosity structure has high chemical activity and variation. The composition of PSL was investigated by methods of secondary emission mass spectroscopy and infrared Fourier spectroscopy.

Paper Details

Date Published: 1 August 1992
PDF: 8 pages
Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131040
Show Author Affiliations
Vladimir Kiselev, Institute of Microelectronics (Russia)
Anatoly Ohurilov, Institute of Microelectronics (Russia)
Anatoly Chrebtugov, Institute of Microelectronics (Russia)
Dmitry V. Buyanov, Institute of Microelectronics (Russia)
Andrey Svetlov, Institute of Microelectronics (Russia)


Published in SPIE Proceedings Vol. 1783:
International Conference of Microelectronics: Microelectronics '92

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