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Proceedings Paper

Influence of silicon surface carbon contamination on oxide quality and SiO2-Si systems properties
Author(s): Romuald B. Beck; Tomasz Brozek; Jerzy Ruzyllo
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Paper Abstract

The contamination of silicon wafers by carbon has become of great interest due to the fact that this effect seems to be basically impossible to avoid during plasma etching and that it is not yet known what ICs parameters it can influence. The results prove that presence of carbon in the silicon subsurface region has enormous influence on the electrophysical properties of the oxide as well as SiO2-Si interface. Both breakdown and interface properties are degraded. Clear evidence is found that the observed effects are caused by carbon contamination and not by structural damage of the silicon substrate.

Paper Details

Date Published: 1 August 1992
PDF: 4 pages
Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131037
Show Author Affiliations
Romuald B. Beck, Warsaw Univ. of Technology (Poland)
Tomasz Brozek, Warsaw Univ. of Technology (Poland)
Jerzy Ruzyllo, The Pennsylvania State Univ. (United States)


Published in SPIE Proceedings Vol. 1783:
International Conference of Microelectronics: Microelectronics '92

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