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Proceedings Paper

Gettering annealing effect on deep-level defect concentration in epitaxial GaAs obtained by chloride method
Author(s): P. V. Kouchinski; V. M. Lomako; L. N. Shakhlevich; M. S. Rusak; G. N. Troyanova; K. D. Yashin
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Paper Abstract

Gettering directly included into a technological process of GaAs epitaxial building-up is described. The process of gettering consisted of the formation of TaAs layer of 5-7 micrometers thickness and its annealing in H2 followed by the etching of the layer. It was found that introduction of gettering annealing into the process of the epitaxial structure build-up leads to a decrease in the concentration of the electrically active deep-level centers.

Paper Details

Date Published: 1 August 1992
PDF: 6 pages
Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131036
Show Author Affiliations
P. V. Kouchinski, Scientific-Research Institute for Applied Physics Problems (Belarus)
V. M. Lomako, Scientific-Research Institute for Applied Physics Problems (Belarus)
L. N. Shakhlevich, Scientific-Research Institute for Applied Physics Problems (Belarus)
M. S. Rusak, Scientific-Research Institute of Radioactive Materials (Belarus)
G. N. Troyanova, Scientific-Research Institute of Radioactive Materials (Belarus)
K. D. Yashin, Scientific-Research Institute of Radioactive Materials (Belarus)


Published in SPIE Proceedings Vol. 1783:
International Conference of Microelectronics: Microelectronics '92

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