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Proceedings Paper

Role of metallization type in semi-insulating GaAs-based optoelectronic switches
Author(s): Ferenc Riesz; Bela Szentpali; M. Nemeth-Sallay; M. Serenyi
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Paper Abstract

Interdigitated planar photodetector structures were fabricated on semi-insulating GaAs material using ohmic-ohmic and Schottky-Schottky contacts. The dc and pulse response performance of the devices indicate that the devices with Schottky contacts are more suitable for high-speed photodetection and pulse generation. The differences between the two types of devices are interpreted with the difference in contact type, trapping mechanisms, and contact resistance effects.

Paper Details

Date Published: 1 August 1992
PDF: 12 pages
Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131035
Show Author Affiliations
Ferenc Riesz, Research Institute for Technical Physics (Hungary)
Bela Szentpali, Research Institute for Technical Physics (Hungary)
M. Nemeth-Sallay, Research Institute for Technical Physics (Hungary)
M. Serenyi, Research Institute for Technical Physics (Hungary)


Published in SPIE Proceedings Vol. 1783:
International Conference of Microelectronics: Microelectronics '92

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