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Proceedings Paper

Disorder of GaAs single crystals resulting from heat treatment
Author(s): A. N. Akimov; L. A. Vlasukova
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Paper Abstract

By means of Raman scattering spectroscopy and selective etching, point defect redistribution and change of crystalline matrix in annealed GaAs crystals was discovered. The temperature interval of most structure changes for each group of investigated crystals has been defined.

Paper Details

Date Published: 1 August 1992
PDF: 8 pages
Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131034
Show Author Affiliations
A. N. Akimov, Byelorussian State Univ. (Belarus)
L. A. Vlasukova, Byelorussian State Univ. (Belarus)


Published in SPIE Proceedings Vol. 1783:
International Conference of Microelectronics: Microelectronics '92

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