Share Email Print

Proceedings Paper

Information-writing mechanisms in thin-film metal-ferroelectric-insulator-semiconductor structures
Author(s): I. L. Baginsky; E. G. Kostov
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The example of ferroelectric films of barium strontium niobate (BSN) deposited on a silicon substrate with thin silicon nitride sublayer was used to show that the specific features of charge accumulation process in metal-ferroelectric-insulator-semiconductor (MFIS) structures depending on the parameters of insulator and ferroelectric layers manifest themselves in three mechanisms: (1) injection writing, (2) polarization writing, and (3) polarization -- injection mechanism at which the polarization in ferroelectric enhanced the injection of carriers from the semiconductor-insulator interface. The details of manifestation of each mechanism were analyzed.

Paper Details

Date Published: 1 August 1992
PDF: 10 pages
Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131027
Show Author Affiliations
I. L. Baginsky, Institute of Automation and Electrometry (Russia)
E. G. Kostov, Institute of Automation and Electrometry (Russia)

Published in SPIE Proceedings Vol. 1783:
International Conference of Microelectronics: Microelectronics '92

© SPIE. Terms of Use
Back to Top