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Proceedings Paper

Information-writing mechanisms in thin-film metal-ferroelectric-insulator-semiconductor structures
Author(s): I. L. Baginsky; E. G. Kostov
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Paper Abstract

The example of ferroelectric films of barium strontium niobate (BSN) deposited on a silicon substrate with thin silicon nitride sublayer was used to show that the specific features of charge accumulation process in metal-ferroelectric-insulator-semiconductor (MFIS) structures depending on the parameters of insulator and ferroelectric layers manifest themselves in three mechanisms: (1) injection writing, (2) polarization writing, and (3) polarization -- injection mechanism at which the polarization in ferroelectric enhanced the injection of carriers from the semiconductor-insulator interface. The details of manifestation of each mechanism were analyzed.

Paper Details

Date Published: 1 August 1992
PDF: 10 pages
Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131027
Show Author Affiliations
I. L. Baginsky, Institute of Automation and Electrometry (Russia)
E. G. Kostov, Institute of Automation and Electrometry (Russia)


Published in SPIE Proceedings Vol. 1783:
International Conference of Microelectronics: Microelectronics '92

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