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Proceedings Paper

Polycrystalline resistors with current-induced tuning of the electrical parameters
Author(s): M. M. Tkachenko; G. P. Kolomoets; Nickolay G. Melentyev
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Paper Abstract

Results of experimental investigation of the current-induced resistance change in polycrystalline silicon films (PSFs) with doping concentrations of 2 (DOT) 1017 cm-3 -2 (DOT) 1020 cm-3 are presented. For the concentration of 1 (DOT) 1019 cm-3 and 2 (DOT) 1019 cm-3 the effect of current-induced resistance increase is found and preliminary discussion is made. The application to monolithic delay line (MDL) is described and the main electrical parameters and characteristics of designed ICs are compared with known MDLs' series.

Paper Details

Date Published: 1 August 1992
PDF: 11 pages
Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131024
Show Author Affiliations
M. M. Tkachenko, Industrial Institute (Ukraine)
G. P. Kolomoets, Industrial Institute (Ukraine)
Nickolay G. Melentyev, Industrial Institute (Ukraine)

Published in SPIE Proceedings Vol. 1783:
International Conference of Microelectronics: Microelectronics '92
Andrzej Sowinski; Jan Grzybowski; Witold T. Kucharski; Ryszard S. Romaniuk, Editor(s)

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