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Proceedings Paper

Capacitance measurements at low frequencies in the study of amorphous silicon
Author(s): Stanislaw M. Pietruszko; Marek Sokolowski
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Paper Abstract

In this paper an automated system for measuring C-V-F-T characteristics at the frequency range of 10-5 - 1000 Hz and a system for measuring quasistatic C-V characteristics are presented. The results of the low frequency capacitance and the quasistatic measurements on MOS structures with amorphous silicon are presented. On the basis of these measurements, parameters of the structure were determined. Low frequency measurements of capacitance were also used to obtain information about deep levels.

Paper Details

Date Published: 1 August 1992
PDF: 7 pages
Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131013
Show Author Affiliations
Stanislaw M. Pietruszko, Warsaw Univ. of Technology (Poland)
Marek Sokolowski, Warsaw Univ. of Technology (Poland)


Published in SPIE Proceedings Vol. 1783:
International Conference of Microelectronics: Microelectronics '92

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