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Proceedings Paper

X-band GaAs MESFET
Author(s): Miroslaw Szreter; Boguslaw Boratynski; Bogdan Paszkiewicz; Iwona Zborowska-Lindert
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Paper Abstract

A 1 micrometers gate GaAs MESFET designed for the lower X-band frequencies has been fabricated and characterized. A MOCVD-grown, Se-doped channel layer with 3900 cm2/Vs carrier mobility and a recessed gate structure resulted in a maximum device transconductance of 180 mS/mm. Transistor microwave performance was characterized by the measured gain of 8 dB and noise figure of 3.5 dB at 9.375 GHz. S-parameters measurements in the frequency range 1 divided by 12 GHz allowed for evaluation of small signal equivalent circuit parameters.

Paper Details

Date Published: 1 August 1992
PDF: 5 pages
Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131010
Show Author Affiliations
Miroslaw Szreter, Technical Univ. of Wroclaw (Poland)
Boguslaw Boratynski, Technical Univ. of Wroclaw (Poland)
Bogdan Paszkiewicz, Technical Univ. of Wroclaw (Poland)
Iwona Zborowska-Lindert, Technical Univ. of Wroclaw (Poland)


Published in SPIE Proceedings Vol. 1783:
International Conference of Microelectronics: Microelectronics '92

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