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Proceedings Paper

GaAs planar doped barrier diodes for microwave applications
Author(s): Bela Szentpali; Vo Van Tuyen; M. Nemeth-Sallay; Arto K. Salokatve; Harry M. Asonen; Markus Pessa
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Paper Abstract

The planar doped barrier diode being majority carrier semiconductor device has promising application areas in high-frequency and microwave circuits. The paper reviews the main features of diode structures. The different current conducting processes as the thermionic emission, the diffusion, and the tunneling are treated. The design rules for the barrier height also are given, and our own experimental results reported. Microwave diodes and zero bias detectors have been fabricated in RITP on layer structures grown in TUT.

Paper Details

Date Published: 1 August 1992
PDF: 12 pages
Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131009
Show Author Affiliations
Bela Szentpali, Research Institute for Technical Physics (Hungary)
Vo Van Tuyen, Research Institute for Technical Physics (Hungary)
M. Nemeth-Sallay, Research Institute for Technical Physics (Hungary)
Arto K. Salokatve, Tampere Univ. of Technology (Finland)
Harry M. Asonen, Tampere Univ. of Technology (Finland)
Markus Pessa, Tampere Univ. of Technology (Finland)


Published in SPIE Proceedings Vol. 1783:
International Conference of Microelectronics: Microelectronics '92

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