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Proceedings Paper

MMIC amplifier for 0.9-2.0 GHz
Author(s): Bogdan Paszkiewicz; Regina Paszkiewicz; Boguslaw Boratynski; Miroslaw Szreter
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Paper Abstract

A single stage GaAs monolithic amplifier chip for L-band has been designed and fabricated. The design includes a 1 micrometers multifinger transistor gate with polyamide bridges for the source interconnections and overlay capacitors with sputtered silicone nitride dielectric. An RC feedback has been used to provide microwave gain of 9 dB within the band. Single supply of 10 V is required. The biasing point of the transistor can be set by proper selection of the source resistors during bonding.

Paper Details

Date Published: 1 August 1992
PDF: 4 pages
Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131008
Show Author Affiliations
Bogdan Paszkiewicz, Institute of Electron Technology (Poland)
Regina Paszkiewicz, Institute of Electron Technology (Poland)
Boguslaw Boratynski, Institute of Electron Technology (Poland)
Miroslaw Szreter, Institute of Electron Technology (Poland)


Published in SPIE Proceedings Vol. 1783:
International Conference of Microelectronics: Microelectronics '92

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