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Proceedings Paper

Simulation of 1/f alpha noise of semiconductor devices
Author(s): Lech Z. Hasse
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Paper Abstract

The 1/f(alpha ) noise model of semiconductor devices as a result of the summation of many burst noise components with different characteristic frequencies foi as well as its physical interpretation for a p-n junction has been presented. The error of spectrum representation depends on the density of frequencies foi (per unit frequency) and the bandwidth depends on the number of components N. A change of exponent (alpha) has been achieved by the exponential distribution of frequencies foi. For random number generation, the power-residue generator has been applied. The computer program during initialization calculates the required number of components N, number of the time samples K, and duration of the simulation process for the assumed value of an error.

Paper Details

Date Published: 1 August 1992
PDF: 7 pages
Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131007
Show Author Affiliations
Lech Z. Hasse, Technical Univ. of Gdansk (Poland)

Published in SPIE Proceedings Vol. 1783:
International Conference of Microelectronics: Microelectronics '92

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