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Proceedings Paper

Monte Carlo simulation of AlGaAs/GaAs HBTs with different collector structure
Author(s): G. Khrenov; Victor Ryzhii; S. Kartashov
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Paper Abstract

High-frequency performances of AlGaAs/GaAs heterostructure bipolar transistors (HBT) were evaluated under different operating conditions. Both HBT with conventional-doped collectors and HBT with selectively doped collectors have been investigated and compared.

Paper Details

Date Published: 1 August 1992
PDF: 11 pages
Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131004
Show Author Affiliations
G. Khrenov, Institute of Physics and Technology (Russia)
Victor Ryzhii, Institute of Physics and Technology (Russia)
S. Kartashov, Institute of Physics and Technology (Russia)


Published in SPIE Proceedings Vol. 1783:
International Conference of Microelectronics: Microelectronics '92

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