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Proceedings Paper

Electrical properties of Mg-doped GaAs and AlxGa1-xAs (x<=0.36)
Author(s): L. Csontos; Balint Podor; K. Somogyi; L. Andor
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Paper Abstract

Mg-doped GaAs and AlxGa1-xAs (x

Paper Details

Date Published: 1 August 1992
PDF: 10 pages
Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131003
Show Author Affiliations
L. Csontos, Research Institute for Technical Physics (Hungary)
Balint Podor, Research Institute for Technical Physics (Hungary)
K. Somogyi, Research Institute for Technical Physics (Hungary)
L. Andor, Research Institute for Technical Physics (Hungary)


Published in SPIE Proceedings Vol. 1783:
International Conference of Microelectronics: Microelectronics '92

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