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Proceedings Paper

Thermal activation energy of natural acceptors in GaSb
Author(s): Balint Podor; K. Somogyi
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Paper Abstract

The thermal activation energy of an impurity in a semiconductor is of fundamental interest both from the point of view of applications and of basic physics. Its value, as deduced from the Hall effect data, depends on the concentration of impurity centers as well as the compensation degree. Various theoretical models have been proposed in the literature to account for this effect. Results of the Hall effect measurements on strongly compensated p- type GaSb were compared with the predictions of the available theoretical models. It was found that among the models considered, the model based on the concept of macroscopic potential fluctuations gives the best quantitative agreement with the experimental data.

Paper Details

Date Published: 1 August 1992
PDF: 8 pages
Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131002
Show Author Affiliations
Balint Podor, Research Institute for Technical Physics (Hungary)
K. Somogyi, Research Institute for Technical Physics (Hungary)


Published in SPIE Proceedings Vol. 1783:
International Conference of Microelectronics: Microelectronics '92

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