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Proceedings Paper

Thermodynamic simulation of deposition of molybdenum and tungsten disilicides in MOCVD processes
Author(s): F. A. Kuznetsov; V. A. Titov; A. N. Golubenko; A. A. Titov
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Paper Abstract

Modeling of disilicide deposition in the system with volatile metal organic and fluorinated silicon organic compounds was performed for a number of systems: M-Si-C-H-Ar, M-Si-C-O- Cl-H-Ar, M-Si-C-H-F-Ar, and M-Si-C-O-F-H-Ar (M equals W,Mo). It was shown that in some of these systems (especially with fluorinated compounds) there are wider regions of quasi- equilibrium deposition of disilicides.

Paper Details

Date Published: 1 August 1992
PDF: 10 pages
Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.131001
Show Author Affiliations
F. A. Kuznetsov, Institute of Inorganic Chemistry (Russia)
V. A. Titov, Institute of Inorganic Chemistry (Russia)
A. N. Golubenko, Institute of Inorganic Chemistry (Russia)
A. A. Titov, Institute of Inorganic Chemistry (Russia)


Published in SPIE Proceedings Vol. 1783:
International Conference of Microelectronics: Microelectronics '92

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