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Proceedings Paper

Preparation and properties of InGaAsP/InP photodiodes
Author(s): Jaroslav Kovac; Frantisek Uherek; Alexander Satka; Rudolf Srnanek; Jan Jakabovic; Martin Tomaska
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Paper Abstract

The various layers of InGaAsP/InP heterostructures have been grown by LPE for PIN and SAM avalanche photodiodes working near 1300 nm. The electrical and optical properties were investigated. With simple run of LPE growth, the low dark current, low capacitance PIN photodiodes have been fabricated. For SAM structure, avalanche gain of M approximately equals 12 near breakdown voltage was measured.

Paper Details

Date Published: 1 August 1992
PDF: 11 pages
Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.130998
Show Author Affiliations
Jaroslav Kovac, Slovak Technical Univ. (Slovak Republic)
Frantisek Uherek, Slovak Technical Univ. (Slovak Republic)
Alexander Satka, Slovak Technical Univ. (Slovak Republic)
Rudolf Srnanek, Slovak Technical Univ. (Slovak Republic)
Jan Jakabovic, Slovak Technical Univ. (Slovak Republic)
Martin Tomaska, Slovak Technical Univ. (Slovak Republic)


Published in SPIE Proceedings Vol. 1783:
International Conference of Microelectronics: Microelectronics '92

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