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Proceedings Paper

Laser gettering of GaAs
Author(s): Yaroslav V. Bobitski; Zenon Y. Gotra; Dmitro Korbutjak
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Paper Abstract

A method of impurity laser gettering applicable to complex semiconductors of the CdTe type is suggested and investigated. The methods of photoluminescence and structural analysis revealed the efficiency of laser recrystallization of a semiconductor plate non-operating area which further serves as the getter zone. The mode of laser radiation from the self-absorption area, which leads to priority evaporation of a more volatile component in the complex semiconductor, forms a stable zone of mechanical stresses which in further heat treatment serves as an efficient run-off for undesired impurities and dot defects.

Paper Details

Date Published: 1 August 1992
PDF: 4 pages
Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.130991
Show Author Affiliations
Yaroslav V. Bobitski, Lvov Polytechnic Institute (Ukraine)
Zenon Y. Gotra, Lvov Polytechnic Institute (Ukraine)
Dmitro Korbutjak, Lvov Polytechnic Institute (Ukraine)

Published in SPIE Proceedings Vol. 1783:
International Conference of Microelectronics: Microelectronics '92

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