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Proceedings Paper

Laser annealing of silicon islands
Author(s): Ol'ga Safronova; Alexander Komarnitskii; Vladimir Kukin; Boris Sedunov; Valerii V. Uzdovskii; Vladimir I. Khainovskii
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Paper Abstract

Laser recrystalization on silicon dioxide polysilicon islands by pulsed laser radiation has been carried out. As a result of laser treatment single-crystalline layers have been produced which were investigated by means of translucent electron microscopy. It has been shown that the solution obtained for temperature distribution can be expressed via elliptical Jacoby sine. The n-channel metal-dielectric-semiconductor transistors with electric parameters close to the device made on crystal substrate are prepared on the island regions by the method of planar technology.

Paper Details

Date Published: 1 August 1992
PDF: 4 pages
Proc. SPIE 1783, International Conference of Microelectronics: Microelectronics '92, (1 August 1992); doi: 10.1117/12.130989
Show Author Affiliations
Ol'ga Safronova, Moscow Institute of Electronic Technique (Russia)
Alexander Komarnitskii, Moscow Institute of Electronic Technique (Russia)
Vladimir Kukin, Moscow Institute of Electronic Technique (Russia)
Boris Sedunov, Moscow Institute of Electronic Technique (Russia)
Valerii V. Uzdovskii, Moscow Institute of Electronic Technique (Russia)
Vladimir I. Khainovskii, Moscow Institute of Electronic Technique (Russia)


Published in SPIE Proceedings Vol. 1783:
International Conference of Microelectronics: Microelectronics '92

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