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Proceedings Paper

Characterization of diamond films deposited by hot-filament CVD using CF4 as doping gas by Raman spectroscopy, FTIR spectroscopy, and atomic force microscopy
Author(s): Vladimir Jesus Trava-Airoldi; C. R. Rodrigues; Masahiko Fukui; Vitor Baranauskas
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Paper Abstract

Diamond films have been deposited by hot-filament CVD on silicon using either a gas mixture of pure methane-hydrogen or a mixture of methane-hydrogen and carbon-tetrafluoride, for the study of the influence of the fluorine radicals in the growth process. Raman spectra shows that the fluorine is effective in the etching of non-diamond bonds since the corresponding Raman shift at 1550 cm1 due to sp2 was not observed in the films deposited with the CF1JCH4 gas mixture. Also the FTIR spectra of these films show a better transmittance in the range from 500 cm1 to 4000 cm1, and an apparent increase of the SiC layer thickness. Using the same thermodinamical conditions, with the CF1JCH4 gas mixture diamond films of high quality are deposited at a higher growth rate. AFM measurements of the surface morphology indicates apparently the same vertical roughness in both kinds of films but larger lateral coalescence in the films produced with CF4content.

Paper Details

Date Published: 20 November 1992
PDF: 10 pages
Proc. SPIE 1759, Diamond Optics V, (20 November 1992); doi: 10.1117/12.130764
Show Author Affiliations
Vladimir Jesus Trava-Airoldi, Instituto Nacional de Pesquisas Espaciais (Brazil)
C. R. Rodrigues, State Univ. of Campinas (Brazil)
Masahiko Fukui, State Univ. of Campinas (Japan)
Vitor Baranauskas, State Univ. of Campinas (Brazil)

Published in SPIE Proceedings Vol. 1759:
Diamond Optics V
Albert Feldman; Sandor Holly, Editor(s)

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