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Proceedings Paper

ESR of diamondlike nuclei created in Si surface by C ion implantation
Author(s): Tomio Izumi; Y. Show; Norio Arai; Masahiro Deguchi; Makoto Kitabatake; Akihisa Yoshida; Takashi Hirao; Yusuke Mori; T. Ito; Akio Hiraki
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Paper Abstract

The defect structures of Si surface layer modified by high dose carbon ion implantation have been studied by ESR (electron spin resonance) method. The ESR analysis revealed the presence of three paramagnetic defects, that is, Si-dangling bonds (g=2.0060, Hpp =6.3 Oe) in Si amorphous region caused by the implantation, Si-dangling bonds with C atom neighbors (g=2.0035, LHpp =6.8 Oe) and C-dangling bond with C atoms neighbors. Moreover, it was found that the tight diamond-like C-C bonds are formed in the implanted Si surface layer. The diamond-like C-C bonds have an important role in obtaining high quality synthesized CVD diamonds.

Paper Details

Date Published: 20 November 1992
PDF: 7 pages
Proc. SPIE 1759, Diamond Optics V, (20 November 1992); doi: 10.1117/12.130761
Show Author Affiliations
Tomio Izumi, Tokai Univ. (Japan)
Y. Show, Tokai Univ. (Japan)
Norio Arai, Tokai Univ. (Japan)
Masahiro Deguchi, Matsushita Electric Industrial Co., Ltd. (Japan)
Makoto Kitabatake, Matsushita Electric Industrial Co., Ltd. (Japan)
Akihisa Yoshida, Matsushita Electric Industrial Co., Ltd. (Japan)
Takashi Hirao, Matsushita Electric Industrial Co., Ltd. (Japan)
Yusuke Mori, Osaka Univ. (Japan)
T. Ito, Osaka Univ. (Japan)
Akio Hiraki, Osaka Univ. (Japan)

Published in SPIE Proceedings Vol. 1759:
Diamond Optics V
Albert Feldman; Sandor Holly, Editor(s)

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