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Proceedings Paper

n-Si/SnO2 interface prepared by spray pyrolysis for photovoltaic applications
Author(s): Hubert Cachet; Azeddine Messad; Michel Froment; Janine Bruneaux
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Paper Abstract

Spray pyrolysis was used to fabricate n-Si(1OO)/SiO2/SnO2 heterojunctions in view of photoconversion of solar energy. The effects of the temperature Tf at which the Sn02 film is formed (400-500°C) are particularly addressed. Direct imaging of the interfacial Si02 layer by HRTEM is presented, showing the relatively abrupt character of the interfaces. It is shown that (i) the open-circuit photopotential Voc strongly decreases when Tf is incresased (ii) at a given Tf, Voc presents a maximum as a function of the interfacial Si02 thickness. These results are discussed in terms of charge accumulation and current limitation at the Si/Si02 boundary.

Paper Details

Date Published: 9 December 1992
PDF: 10 pages
Proc. SPIE 1729, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XI: Photovoltaics, Photochemistry, Photoelectrochemistry, (9 December 1992); doi: 10.1117/12.130563
Show Author Affiliations
Hubert Cachet, Univ. Pierre et Marie Curie (France)
Azeddine Messad, Univ. Pierre et Marie Curie (France)
Michel Froment, Univ. Pierre et Marie Curie (France)
Janine Bruneaux, Univ. Pierre et Marie Curie (France)


Published in SPIE Proceedings Vol. 1729:
Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XI: Photovoltaics, Photochemistry, Photoelectrochemistry

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