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Proceedings Paper

Effect of sulfur partial pressure on the growth of CuInS2 single crystals
Author(s): M. Kanis; M. L. Fearheiley; K. Diesner; Sebastian Fiechter; B. Hermoneit; Siegfried Gramlich; I. Rechenberg
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Paper Abstract

CuInS2 single crystaLs of moderate size have been produced by the gradient freeze technique under different sulfur pressures. Results from EDX show that with higher sulfur pressures the cracking along the ingot decreases, but at 2 bar these cracks are still present. XRD shows that CuS is present at these cracks and is due to the loss of In2S into the gas phase. Despite this loss of In2S PL reveals the material to be In-rich.

Paper Details

Date Published: 9 December 1992
PDF: 7 pages
Proc. SPIE 1729, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XI: Photovoltaics, Photochemistry, Photoelectrochemistry, (9 December 1992); doi: 10.1117/12.130561
Show Author Affiliations
M. Kanis, Hahn-Meitner-Institut GmbH (Germany)
M. L. Fearheiley, Hahn-Meitner-Institut GmbH (Germany)
K. Diesner, Hahn-Meitner-Institut GmbH (Germany)
Sebastian Fiechter, Hahn-Meitner-Institut GmbH (Germany)
B. Hermoneit, Ferdinand Braun Institut f. Hoechsfrequenztechnik (Germany)
Siegfried Gramlich, Ferdinand Braun Institut f. Hoechsfrequenztechnik (Germany)
I. Rechenberg, Ferdinand Braun Institut f. Hoechsfrequenztechnik (Germany)


Published in SPIE Proceedings Vol. 1729:
Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XI: Photovoltaics, Photochemistry, Photoelectrochemistry

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