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Proceedings Paper

Study on the electrochromic mechanism of rf diode sputtered nickel oxide films
Author(s): Xingfang Hu; Xiaofeng Chen; Michael G. Hutchins
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Paper Abstract

This paper gives the experimental evidences to establish a new electrochromism for the nickel oxide films deposited by rf reactive sputtering. ESCA results indicate that all the films in as-deposited, coloured and bleached states are nonstoichiometric nickel oxide with different oxidation states and there is no evidence to support the exitance of nickel hydroxide in the three states. SIMS has been used to analyze the injected Li+ concentration in these films. The relative content of Li in films is 0 for as-deposited, 1.3 for coloured and 4.0 for bleached. Li+ implantation has been used to initially bleach the dark as-deposited films. The results indicate that the as-deposited films can be bleached by Li+ implantation. A new electrochromic reaction model for the reactively sputtered nickel oxide films has been proposed.

Paper Details

Date Published: 25 November 1992
PDF: 7 pages
Proc. SPIE 1728, Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XI: Chromogenics for Smart Windows, (25 November 1992); doi: 10.1117/12.130534
Show Author Affiliations
Xingfang Hu, Shanghai Institute of Ceramics (China)
Xiaofeng Chen, Shanghai Institute of Ceramics (China)
Michael G. Hutchins, Oxford Polytechnic (United Kingdom)


Published in SPIE Proceedings Vol. 1728:
Optical Materials Technology for Energy Efficiency and Solar Energy Conversion XI: Chromogenics for Smart Windows

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