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Proceedings Paper

Evaluation of methods to reduce linewidth variation due to topography for i-line and deep-UV lithography
Author(s): Miles J. Gehm; Patrick Jaenen; Veerle Van Driessche; Anne-Marie Goethals; Nandasiri Samarakone; Luc Van den Hove; Bart Denturck
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Paper Details

Date Published: 1 June 1992
PDF: 20 pages
Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); doi: 10.1117/12.130372
Show Author Affiliations
Miles J. Gehm, Interuniv. Micro Electronics Ctr. (Belgium)
Patrick Jaenen, Interuniv. Micro Electronics Ctr. (Belgium)
Veerle Van Driessche, Interuniv. Micro-Elektronica Centrum vzw (Belgium)
Anne-Marie Goethals, Interuniv. Micro Electronics Ctr. (Belgium)
Nandasiri Samarakone, Northern Telecom Ltd. (United States)
Luc Van den Hove, Interuniv. Micro Electronics Ctr. (Belgium)
Bart Denturck, UCB-JSR Electronics NV (Belgium)

Published in SPIE Proceedings Vol. 1674:
Optical/Laser Microlithography V
John D. Cuthbert, Editor(s)

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