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Proceedings Paper

Novel 0.2-um i-line lithography using phase-shifting on the substrate
Author(s): Hiroki Tabuchi; Takayuki Taniguchi; Hiroyuki Moriwaki; Makoto Tanigawa; Keichiro Uda; Keizo Sakiyama
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Paper Abstract

This paper describes a novel i-line lithography by phase-shifting on the substrate (POST). With POST, 0.2?m resist patterns have been achieved by using an i-line stepper and conventional masks without phase shifters. It was confirmed that fine patterns were formed by the phase-shifting effect in the resist on the substrate. Simulation suggests that POST has a better resolution than a phase-shifting mask. This method consists of simple processes and is expected to be useful in the fabrication of deep-submicron patterns for ULSI.

Paper Details

Date Published: 1 June 1992
PDF: 11 pages
Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); doi: 10.1117/12.130359
Show Author Affiliations
Hiroki Tabuchi, Sharp Corp. (Japan)
Takayuki Taniguchi, Sharp Corp. (Japan)
Hiroyuki Moriwaki, Sharp Corp. (Japan)
Makoto Tanigawa, Sharp Corp. (Japan)
Keichiro Uda, Sharp Corp. (Japan)
Keizo Sakiyama, Sharp Corp. (Japan)


Published in SPIE Proceedings Vol. 1674:
Optical/Laser Microlithography V
John D. Cuthbert, Editor(s)

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