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Proceedings Paper

Polarization studies with broadband deep-UV lithography
Author(s): Birol Kuyel; Eytan Barouch; Uwe Hollerbach; Steven A. Orszag
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Paper Abstract

We have performed a study of TM and TE polarization with a single wavelength and a broadband spectrum (14 nm in width) exposure. We also examined effects of using scalar and vector aerial images, as well as process latitude of the post-exposure baking. We used SNR-248 negative deep-UV resist with an exposure energy of 24 mJ/cm2. The resist thickness employed was 1? over 0.28? silicon oxide over a silicon substrate. A typical line width and space studied ranged from 0.35? to 0.5?.

Paper Details

Date Published: 1 June 1992
PDF: 22 pages
Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); doi: 10.1117/12.130336
Show Author Affiliations
Birol Kuyel, SEMATECH (United States)
Eytan Barouch, Princeton Univ. (United States)
Uwe Hollerbach, Princeton Univ. (United States)
Steven A. Orszag, Princeton Univ. (United States)


Published in SPIE Proceedings Vol. 1674:
Optical/Laser Microlithography V
John D. Cuthbert, Editor(s)

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