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Proceedings Paper

Efficient numerical simulation of high-NA i-line lithography processes
Author(s): Chi-Min Yuan; Steve S. Miura; Nicholas K. Eib
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Paper Abstract

Numerical algorithms employing the ID imaging model and the 2D wave-guide scattering model were implemented to achieve high speed in simulating high NA i-line processes. The CPU consumption and the range of validity of the models used were discussed. The simulator was applied to study the possibility of imaging 0.35/mi lines and spaces(L/S) utilizing lenses of NA=0.55, 0.60 and 0.65 and single layer resist (SLR) processes.

Paper Details

Date Published: 1 June 1992
PDF: 19 pages
Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); doi: 10.1117/12.130329
Show Author Affiliations
Chi-Min Yuan, IBM/East Fishkill Facility (United States)
Steve S. Miura, IBM/East Fishkill Facility (United States)
Nicholas K. Eib, IBM/East Fishkill Facility (United States)


Published in SPIE Proceedings Vol. 1674:
Optical/Laser Microlithography V
John D. Cuthbert, Editor(s)

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